In recent years, under the guidance of policies and the strong support of capital, the development of China's silicon carbide industry has been greatly accelerated, and a large number of outstanding silicon carbide enterprises with independent intellectual property rights, such as Tianke Heda, Tianyue Advanced, Hantiancheng, Dongguan Tianyu, Tyco Tianrun, have emerged. With the rise of these enterprises, the technology gap of silicon carbide in China has been broken and the technology gap with developed countries has been gradually narrowed.

Recently, the reporter of Core Bugs "Walking into the Industrial Chain" interviewed Yang Chengjin, the chairman of Shenzhen Senguoke Technology Co., Ltd. (hereinafter referred to as "Senguoke"), a rising emerging enterprise in the silicon carbide device industry, to discuss the development of Senguoke's current enterprises and its prospects for the silicon carbide industry in the background of low-carbon and dual carbon era.

The product is benchmarking with the parameter indexes of foreign large factories, and silicon carbide diodes have been shipped in large quantities

It is understood that Senguoke is a national high-tech enterprise specializing in the design and sales of silicon carbide (SiC) power devices. The fifth generation 650V and 1200V TMPS (Thinned MPS) silicon carbide Schottky diodes, which are now the main products, have been strictly verified in the market, with a yield of more than 97%, and are widely used in many large fields, such as fast charging power supply, industrial power supply, photovoltaic inverter, energy storage inverter, new energy vehicles, charging piles, mining machine power supply, etc.

Typical application scenarios of silicon carbide diodes

Source: Senguoke

"In fact, Senguoke decided to make silicon carbide rate devices only in 2018. Before that, the company mainly focused on Vision ADAS (Advanced Assisted Driving) and Brushless Motor Drive (BLDC) chips." Yang Chengjin said, "Entering the silicon carbide industry is the result of comprehensive consideration of the market and its own positioning. With the rapid development of the new energy industry, higher requirements have been put forward for power devices. The third generation semiconductor silicon carbide devices, which have unique advantages such as high voltage, large current, high temperature, high frequency, low loss, have become the development trend of power devices."

The reporter learned that although Senguoke started late in the field of silicon carbide, it quickly opened the market for the application of silicon carbide by relying on its keen market sense and selecting high-power fast charging head, a huge consumer electronics market.

Yang Chengjin pointed out: "In recent years, in order to solve the charging anxiety of users and pursue the highest volumetric energy efficiency ratio, charging head manufacturers have begun to use GaN MOS and SiC diodes as energy efficiency converters for charging heads on a large scale. At present, the annual demand for fast charging heads is estimated at 2 to 3 billion pieces. If all SiC diodes are used, the demand for silicon carbide power devices with a scale of more than 10 billion yuan will be formed."

After long-term research and development and repeated verification, Senguoke launched more than ten types of silicon carbide diode products with different packages in four specifications: KS04065 (650V/4A), KS06065 (650V/6A), KS08065 (650V/8A) and KS10065 (650V/10A) for the high-power fast charging market. It is worth mentioning that these dozens of products are no inferior to foreign manufacturers in terms of specific performance parameters, and can provide different packaging forms according to the selection requirements of different partners.

Take the KS06065 product as an example. The product has a withstand voltage of 650V, a forward current of 6A, and a maximum operating temperature of 175 ℃. It is packaged with PDFN5 * 6. Two are used for two-phase rectification, and one silicon carbide diode is used for PFC bypass to charge the electrolytic capacitor during startup. At present, it has been used in EGO EXINNO's 240W gallium nitride travel fast charge and Ruishijia's 240W dual C-port power module.

"Our products have been shipped in large quantities in the charging head consumer market. At present, we have cooperated with more than 100 customers, including Lixun, Lvlian and other well-known consumer electronics enterprises. With excellent product characteristics such as low leakage, unique packaging process, Low Vf, High Bv, and high cost performance, our products have been widely praised by downstream partners." Yang Chengjin stressed.

In addition to consumer electronics, photovoltaic is also one of the important application scenarios of silicon carbide devices. As the photovoltaic industry has entered the era of "large modules, large inverters, large span supports, and large string", the voltage level of photovoltaic power stations has been raised from 1000V to more than 1500V. Silicon carbide power devices must be used to improve conversion efficiency and reduce system costs. According to CASA Research data, the proportion of silicon carbide power devices used in photovoltaic inverters will be 10% in 2020, and it is estimated that the proportion of silicon carbide photovoltaic inverters will reach 50% in 2025.

Yang Chengjin said that silicon carbide diode plays a very important role in photovoltaic power generation and in the PFC circuit of inverter unit. Facing the photovoltaic inverter market, the company has successively launched 1200V series silicon carbide diode KS10120 (1200V/10A, KS20120 (1200V/20A), KS30120 (1200V/30A), KS40120 (1200V/40A) and other products, which have reached the JEDEC reliability test standard in performance and performed well in the double 85 test, and can realize the perfect replacement of similar products of international mainstream brands.